irfn9130 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk document number 5355 issue 1 bv ds drain ? source breakdownvoltage v gs gate ? source voltage i d continuous drain current @ t case = 25c i d continuous drain current @ t case = 100c i dm pulsed drain current p d power dissipation @ t case = 25c linear derating factor t j , t stg operating and storage temperature range r jc thermal resistance junction to case -100v 20v -11a -7a -44a 75w 0.6w/c ?55 to +150c 1.7c/w max. mechanical data dimensions in mm (inches)
absolute maximum ratings (t case = 25c unless otherwise stated) smd 1 (to-276ab) p?channel power mosfet for hi?rel applications features hermetically sealed simple drive requirements lightweight screening options available all leads isolated from case pad 1 ? gate pad 2 ? drain pad 3 ? source v dss -100v i d(cont) -11a r ds(on) 0.3 ? ? (also available as irf9130smd with gate and source reversed) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
irfn9130 semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk parameter test conditions min. typ. max. unit v gs = 0 i d = -1ma reference to 25c i d = -1ma v gs = -10v i d = -7a v ds = v gs i d = -250 a v ds -15v i ds = -7a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = -20v v gs = 20v v gs = 0 v ds = -25v f = 1mhz v gs = -10v i d = -11a v ds = 0.5bv dss v dd = -50v i d = -11a r g = 7.5 ? i s = -11a v gs = 0 v i f = -11a v dd -50v d i / d t -100a/ s electrical characteristics (t c = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance * gate threshold voltage forward transconductance * zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current diode forward voltage * reverse recovery time reverse recovery charge -100 -0.1 0.30 -2 -4 2.5 -25 -250 -100 100 800 350 125 30 7.1 2.1 60 140 140 140 -11 -44 -4.7 250 3.0 v v/c ? v s ( ? a na pf nc ns a v ns c bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr static electrical ratings dynamic characteristics source ? drain diode characteristics ( ? ) semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5355 issue 1 notes * pulse test: pulse width 300 s, ? 2%
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